85U03GH – AP85U03GH

This is one of the semiconductor types. This part name is 85U03GH.

This product has AP85U03GH functions.

Manufacturers of product is Advanced Power Electronics.

Image and pinout :

85U03GH datasheet pinout

85U03GH PDF Datasheet

Some of the text files within the PDF file

AP85U03GH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 5.5mΩ 75A S

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G □ D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 +20 75 56 220 60 0.48 4 Units V V A A A W W/℃ mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating [ … ]

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K4108 – 2SK4108 – Vdss=500V, N-ch, MOSFET

This is one of the semiconductor types. This part name is K4108.

This product has 2SK4108 functions.

Manufacturers of product is Toshiba Semiconductor.

Image and pinout :

K4108 datasheet pinout

K4108 PDF Datasheet

Some of the text files within the PDF file

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0. 21Ω (typ.) : |Yfs| = 14 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 20 80 150 960 20 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Note: Using continuously under hea [ … ]

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