2SK1944-01 PDF datasheet can download.
This product has N-channel MOS-FET functions.
This is one of the semiconductor types. This part name is 2SK1944-01.
Manufacturers of the product is Fuji Electric.
Image and pinout :
Some of the text files within the PDF file
2SK1944-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 2,8Ω 5A 100W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics – Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 ±30 100 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit – Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance I [ … ]
Please refer to the file for details.