BUZ111 PDF – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

BUZ111 PDF datasheet can download.

This product has SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) functions.

This is one of the semiconductor types. This part name is BUZ111.

Manufacturers of the product is Siemens Semiconductor Group.

Image and pinout :

BUZ111 pdf datasheet pinout

 

Some of the text files within the PDF file

BUZ111S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.008 Ω Package Ordering Code BUZ111S TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C ID A 80 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C mJ 700 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 80 25 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 250 V W Semiconductor Group 1 28/Jan/1998 BUZ111S SPP80N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, jun [ … ]

Please refer to the file for details.

BUZ111 PDF Datasheet

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