This is one of the semiconductor types. This part name is G50N60HS.
This product has SGW50N60HS functions.
Manufacturers of product is Infineon.
Image and pinout :
G50N60HS PDF Datasheet
Some of the text files within the PDF file
SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A Eoff25 Tj Marking Package PG-TO-247-3-21 G E PG-TO-247-3-21 Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 0.88mJ 150°C G50N60HS Symbol VCE IC Value 600 100 50 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 50A, VCC=50V [ … ]
Please refer to the file for details.