HU60N03 PDF datasheet can download.
This product has 30V N-Channel MOSFET functions.
This is one of the semiconductor types. This part name is HU60N03.
Manufacturers of the product is HAOLIN.
Image and pinout :
Some of the text files within the PDF file
HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V 100% Avalanche Tested TO-252 TO-251 HD60N03 HU60N03 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 30 60 36.6 220 ±20 230 60 11 7.0 PD TJ, TSTG TL Power Dissipat [ … ]
Please refer to the file for details.