K3995 PDF datasheet can download.
This product has Silicon N-channel enhancement MOSFET functions.
This is one of the semiconductor types. This part name is K3995.
Manufacturers of the product is Panasonic.
Image and pinout :
Some of the text files within the PDF file
This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP Features Medium breakdown voltag: VDSS = 200 V, ID = 30 A Low ON resistance, optimum for PDP panel drive Package Code TO-220C-G1 Marking Symbol: K3995 Pin Name 1. Gate 2. Drain 3. Source Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current *1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current *1 IDRP Avalanche energy capability *2 Drain power dissipation Junction temperature Storage temperature EAS PD Tj TC = 25°C Ta = 25°C *3 Tstg Electrical Characteristics TC = 25°C±3°C Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage ce /D isc Parameter on tin Symbol VDSS IDSS IGSS Vth ue Note) *1: PW ≤ 10 ms, Duty ≤ 1.0% *2: Avalanche energy capability [ … ]
Please refer to the file for details.