K12A50D – TK12A50D – Vdss=500V, N-ch MOSFET

This is one of the semiconductor types. This part name is K12A50D.

This product has TK12A50D functions.

Manufacturers of product is Toshiba Semiconductor.

Image and pinout :

K12A50D datasheet pinout

K12A50D PDF Datasheet

Some of the text files within the PDF file

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 12 48 45 364 12 4.5 150 -55 to 150 http://www.DataSheet4U.net/ Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the ap [ … ]

Please refer to the file for details.

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